
High-Performance Conductive Adhesives Unlock the Potential of GaN, SiC, and EV Modules
I. Power Semiconductor Upgrades Drive Encapsulation Material Innovation With the rapid adoption of third-generation semiconductors (SiC, GaN), high-power IGBT modules, and automotive-grade power devices, operating current densities and junction temperatures of chips are continuously rising. Traditional tin-based solders (e.g., AuSn, SAC) are increasingly reaching their limits in terms of thermal conductivity, high-temperature reliability, and resistance























